IRF9540NS
Overview
- Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IRF9540NS |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 248.71 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF9540NS | International Rectifier | Power MOSFET |
| IRF9540NSPbF | International Rectifier | Power MOSFET |
| F9540N | International Rectifier | IRF9540N |
| IRF9540NPBF | International Rectifier | Power MOSFET |
| IRF9540NLPbF | International Rectifier | Power MOSFET |