| Part Number | IRF9540NS |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variat.
*Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) *Advanced trench process technology *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Fast switching application. *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL. |
IRF9540NS Datasheet
The IRF9540NS is a P-Channel MOSFET.
| Part Number | IRF9540NS |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient an. of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. IRF9540NSPbF IRF9540NLPbF HEXFET® Power M. |