Datasheet4U Logo Datasheet4U.com

IRF9540N Datasheet P-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N ·.

General Description

·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -23 IDM Drain Current-Single Pulsed -76 PD Total Dissipation @TC=25℃ 140 Tj Max.

Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;

Key Features

  • Static drain-source on-resistance: RDS(on)≤0.117Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRF9540N Distributor & Price

Compare IRF9540N distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.