IRF9530NS Datasheet - INCHANGE

IRF9530NS, P-Channel MOSFET

isc P-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 79 Tj Max.
Operating Junction Temperature -55~175 Tstg Storage Te

IRF9530NS-INCHANGE.pdf