Datasheet4U Logo Datasheet4U.com

IRF9530N P-Channel MOSFET

IRF9530N Description

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N *.
Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use i.

IRF9530N Features

* Static drain-source on-resistance: RDS(on)≤0.2Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF9530N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 IDM Drain Current-Single Pulsed -56 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage

📥 Download Datasheet

Preview of IRF9530N PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF9530N
Manufacturer
INCHANGE
File Size
237.54 KB
Datasheet
IRF9530N-INCHANGE.pdf
Description
P-Channel MOSFET

📁 Related Datasheet

📌 All Tags

P-Channel MOSFET INCHANGE
INCHANGE IRF9530N-like datasheet