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IRF9530N - P-Channel MOSFET

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source

Features

  • Static drain-source on-resistance: RDS(on)≤0.2Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IRF9530N
Manufacturer INCHANGE
File Size 237.54 KB
Description P-Channel MOSFET
Datasheet download datasheet IRF9530N Datasheet
Additional preview pages of the IRF9530N datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 IDM Drain Current-Single Pulsed -56 PD Total Dissipation @TC=25℃ 79 Tj Max.
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