IRF9530N Datasheet - INCHANGE

IRF9530N, P-Channel MOSFET

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N *

Features

* Static drain-source on-resistance: RDS(on)≤0.2Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 IDM Drain Current-Single Pulsed -56 PD Total Dissipation @TC=25℃ 79 Tj Max.
Operating Junction Temperature 175 Tstg Storage

IRF9530N-INCHANGE.pdf