IRF9530N P-Channel MOSFET

INCHANGE

Description

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N *.
Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use i.

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Datasheet Specifications

Part number: IRF9530N
Manufacturer: INCHANGE
File Size: 237.54 KB
Datasheet: IRF9530N-INCHANGE.pdf
Description: P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.2Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 IDM Drain Current-Single Pulsed -56 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage

IRF9530N Distributors

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IRF9530N P-Channel MOSFET INCHANGE

INCHANGE IRF9530N-like datasheet