| Part Number | IRF9530N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe.
AR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating J. |
IRF9530N Datasheet and Specifications PDF
The IRF9530N is a Power MOSFET.
| Part Number | IRF9530N Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM R.
*Static drain-source on-resistance: RDS(on)≤0.2Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRIPTION *Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely effi. |