Datasheet4U Logo Datasheet4U.com

IRF9540N

P-Channel MOSFET

IRF9540N Features

* Static drain-source on-resistance: RDS(on)≤0.117Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Combine with the fast switching speed and ruggedized device design,provide the desig

IRF9540N General Description


*Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source.

IRF9540N Datasheet (237.09 KB)

Preview of IRF9540N PDF

Datasheet Details

Part number:

IRF9540N

Manufacturer:

INCHANGE

File Size:

237.09 KB

Description:

P-channel mosfet.

📁 Related Datasheet

IRF9540 P-Channel Power MOSFET (Intersil Corporation)

IRF9540 Power MOSFET (International Rectifier)

IRF9540 P-Channel MOSFET (Harris Corporation)

IRF9540 P-Channel Power MOSFETs (Fairchild Semiconductor)

IRF9540 Power MOSFET (Vishay)

IRF9540N Power MOSFET (International Rectifier)

IRF9540NL Power MOSFET (International Rectifier)

IRF9540NL P-Channel MOSFET (INCHANGE)

IRF9540NLPBF HEXFET POWER MOSFET (International Rectifier)

IRF9540NPBF Power MOSFET (International Rectifier)

TAGS

IRF9540N P-Channel MOSFET INCHANGE

Image Gallery

IRF9540N Datasheet Preview Page 2

IRF9540N Distributor