The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Semiconductor
July 1998
IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
-15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs
Features
Description
• -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
IRF9540 Datasheet
