IRF9530NLPBF
International Rectifier
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Power mosfet.
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IRF9530NLPbF - Power MOSFET
(Infineon)
.
IRF9530NL - Power MOSFET
(International Rectifier)
PD - 91523A
IRF9530NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.
IRF9530NL - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.
IRF9530N - Power MOSFET
(International Rectifier)
PD - 91482C
IRF9530N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-.
IRF9530N - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
IRF9530N,IIRF9530N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tes.
IRF9530NPBF - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free
De.
IRF9530NPBF - P-Channel MOSFET
(VBsemi)
IRF9530NPBF
.VBsemi.
IRF9530NPBF Datasheet
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Config.
IRF9530NS - Power MOSFET
(International Rectifier)
PD - 91523A
IRF9530NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.
IRF9530NS - P-Channel MOSFET
(VBsemi)
IRF9530NS-VB
IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
-100
0.22 at VGS = - 10.
IRF9530NS - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.
