IRFPG40 Datasheet - Intersil Corporation

IRFPG40 N-Channel Power MOSFET

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IRFPG40 Data Sheet July 1999 File Number 2879.2 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching.

IRFPG40 Features

* 4.3A, 1000V

* rDS(ON) = 3.500Ω

* UIS SOA Rating Curve (Single Pulse)

* -55oC to 150oC Operating and Storage Temperature Symbol D G Ordering Information PART NUMBER IRFPG40 PACKAGE TO-247 BRAND IRFPG40 S NOTE: When ordering, include the entire part number. Pack

IRFPG40 Datasheet (46.76 KB)