Description
® ISL6610, ISL6610A Data Sheet November 22, 2006 FN6395.0 Dual Synchronous Rectified MOSFET Drivers The ISL6610, ISL6610A integrates two ISL6609, IS.
Features
* 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6610, ISL6610A also features an input that r
Applications
* Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adap