RF340 Datasheet - Intersil Corporation

RF340 10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET

IRF340 Data Sheet March 1999 File Number 2307.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is designed, tested and guaranteed to withstand a speciﬁc level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low .

RF340 Features

* 10A, 400V

* rDS(ON) = 0.550Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related L

RF340_IntersilCorporation.pdf

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Datasheet Details

Part number:

RF340

Manufacturer:

Intersil Corporation

File Size:

55.68 KB

Description:

10a/ 400v/ 0.550 ohm/ n-channel power mosfet.

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RF340 RF340 10A 400V 0.550 Ohm N-Channel Power MOSFET Intersil Corporation

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