RFP18N08 Datasheet | Intersil

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. BRAND RFM18N08 RFM18N10 RFP18N08 RFP18N10 September 1998 [ /Title (RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10) /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark Features - 18A, 80V and 100V - r DS(ON) = 0.100Ω - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER RFM18N08 RFM18N10 RFP18N08 RFP18N10 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB Symbol NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) DRAIN (TAB) JEDEC TO-220AB SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 5-1 RFM18N08, RFM18N10, RFP18N08, RFP18N10 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified RFM18N08 80 80 18 45 ±20 100 0.8 -55 to 150 300 260 RFM18N10 100 100 18 45 ±20 100 0.8 -55 to 150 300 260 RFP18N08 80 80 18 45 ±20 75 0.6 -55 to 150 300 260 RFP18N10 100 100 18 45 ±20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/o C o C o C o C Drain to Source Voltage (Note 1) - - - - . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - . . . . VDGR Continuous Drain Current- - - - - - . . . ID Pulsed Drain Current (Note 3) - - -...