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FRE9160R P-Channel Power MOSFET

FRE9160R Description

FRE9160D, FRE9160R, FRE9160H June 1998 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-258AA .
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratin.

FRE9160R Features

* 30A, -100V, RDS(on) = 0.095Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/se

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