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FRE9260H P-Channel Power MOSFET

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Description

FRE9260D, FRE9260R, FRE9260H June 1998 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-258AA .
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratin.

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Datasheet Specifications

Part number
FRE9260H
Manufacturer
Intersil
File Size
47.85 KB
Datasheet
FRE9260H_IntersilCorporation.pdf
Description
P-Channel Power MOSFET

Features

* 19A, -200V, RDS(on) = 0.210Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(SI) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/se

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