FRF9150H - P-Channel Power MOSFET
Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness rangi
FRF9150H Features
* 23A, -100V, rDS(ON) = 0.140Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 R
