FRL430H - N-Channel Power MOSFET

Intersil

FRL430H Datasheet Preview — Preview of FRL430H PDF

Datasheet Details

Part number	FRL430H
Manufacturer	Intersil
File Size	47.46 KB
Description	N-Channel Power MOSFET
Datasheet	FRL430H_IntersilCorporation.pdf

FRL430H Product details

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

2A, 500V, RDS(on) = 2.50Ω.
Second Generation Rad Hard MOSFET Results From New Design Concepts.
Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 8.0nA Per-RAD(Si)/sec Typically Pre-RAD Speciﬁcations for 3E12 Neutrons/cm2 Usable to 3E13 Neutrons/cm2.
Gamma Dot.

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Published: Apr 23, 2005 |