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FRL430H

N-Channel Power MOSFET

FRL430H Features

* 2A, 500V, RDS(on) = 2.50Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec a

FRL430H General Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang.

FRL430H Datasheet (47.46 KB)

Preview of FRL430H PDF

Datasheet Details

Part number:

FRL430H

Manufacturer:

Intersil

File Size:

47.46 KB

Description:

N-channel power mosfet.

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FRL430H N-Channel Power MOSFET Intersil

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