FRX130H4 Datasheet (Intersil) - Radiation Hardened N-Channel Power MOSFETs

FRX130H4, Radiation Hardened N-Channel Power MOSFETs

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness rangi

FRX130H4 Features

* 6A, 100V, rDS(ON) = 0.180Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Deﬁned End-Point Specs at 300K RAD (Si) and 1000K RAD (Si) - Performance Permits Limited Use to 3000K RAD (Si)