IRFR9110 Datasheet (Intersil) - P Channel Power MOSFET

IRFR9110, P Channel Power MOSFET

IRFR9110, IRFU9110 Data Sheet July 1999 File Number 4001.3 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁc level of energy in the avalanche breakdown mode of operation.

These are P-Channel enhancement mode silicon gate power ﬁeld-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transisto

IRFR9110 Features

* 3.1A, 100V

* rDS(ON) = 1.200Ω

* Temperature Compensating PSPICE™ Model

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Informatio