IRFR9120 Datasheet (Intersil) - P Channel Power MOSFET

IRFR9120, P Channel Power MOSFET

IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a speciﬁc level of energy in the avalanche breakdown mode of operation.

They are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistor

IRFR9120 Features

* 5.6A, 100V

* rDS(ON) = 0.600Ω

* Temperature Compensating PSPICE™ Model

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Informatio