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FSPYE230D1 - N-Channel Power MOSFET

Intersil Corporation

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Datasheet Details

Part number: FSPYE230D1
Manufacturer: Intersil Corporation
File Size: 83.75 KB
Datasheet: FSPYE230D1_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

FSPYE230D1 Product details

Features

12A, 200V, rDS(ON) = 0.140Ω.
UIS Rated.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS.
Photo Current - 3.0nA Per-RAD (Si)/s Typ.

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N-Channel Power MOSFET Intersil Corporation

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