2SA2167 - Silicon PNP Epitaxial Type Transistor
www.datasheet4u.com ISAHAYA ELECTRONICS CORPORATION 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS.
COLLECTOR CURRENT -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV] Ta=25℃ VCE=-6V Ta=25℃ IC/IB=20/1 www.datasheet4u.com 1000 DC FORWARD CURRENT GAIN hFE 100 -100 10 -10 1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000 -1 -1 -10 -100 -1000 CO
