2SA2112
Features
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Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
1 : Emitter 2 : Collector 3 : Base
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions
SANYO : NMP
Ratings --50 --50 --50 --6 --3 --6 --600 1 150 --55 to +150 Unit V V V V A A m A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO h FE f T Conditions VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--100m A VCE=-10V, IC=--500m A Ratings min typ max --1 --1 200 390 560 MHz Unit µA µA
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