2SC5974
Isahaya Electronics Corporation
110.21 KB
Small-signal transistor.
OUTLINE DRAWING ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application Unit : mm 4.0
0.
📁 Related Datasheet
2SC5974A - SMALL-SIGNAL TRANSISTOR
(Isahaya Electronics Corporation)
OUTLINE DRAWING Unit:mm 4.0
0.1 0.45
..
1.27 1.27
‡@ ‡A ‡B
TERMINAL CONNECTOR EIJA: -
Item A B hFE 200 to 700350 to 1200
.Da.
2SC5974B - SMALL-SIGNAL TRANSISTOR
(Isahaya Electronics Corporation)
OUTLINE DRAWING Unit:mm 4.0
0.1 0.45
..
1.27 1.27
‡@ ‡A ‡B
TERMINAL CONNECTOR EIJA: -
..
..
.
2SC5975 - Silicon NPN Epitaxial Type Transistor
(Renesas Technology)
2SC5975
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
REJ03G0381-0100Z Rev.1.00 Jul.06.2004
Features
• High gain bandwidth pr.
2SC5976 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5976
2SC5976
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applicatio.
2SC5979 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number : ENN8070
2SC5979
2SC5979
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DC / DC conv.
2SC5900 - NPN TRANSISTOR
(Sanyo Semicon Device)
2SC5900
No.
2SC5900
µ
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5900
µ µ
PW=20µs D..
2SC5900 - Silicon NPN Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5900
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·.
2SC5902 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5902
DESCRIPTION ·High Breakdown Voltage ·Built-in damper diode type ·High Switching Spee.
