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2SC5902 - NPN Transistor

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Description

High Breakdown Voltage Built-in damper diode type High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizon

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Datasheet Details

Part number 2SC5902
Manufacturer INCHANGE
File Size 174.33 KB
Description NPN Transistor
Datasheet download datasheet 2SC5902 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5902 DESCRIPTION ·High Breakdown Voltage ·Built-in damper diode type ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 9 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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