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2SC5993 - NPN Transistor

2SC5993 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5993 .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Complement to Type 2SA2140. 100% avalanche te.

2SC5993 Applications

* Power amplification
* For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Coll

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Datasheet Details

Part number
2SC5993
Manufacturer
INCHANGE
File Size
176.88 KB
Datasheet
2SC5993-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC5993-like datasheet