* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
2SC5991
Sanyo Semicon Device
68.62 KB
Npn transistor.
www.DataSheet4U.com
Ordering number : ENN8071
2SC5991
2SC5991
Applications
*
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Ap.
📁 Related Datasheet
2SC5993 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5993
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR.
2SC5993 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC5993
Silicon NPN epitaxial planar type
For power amplification For TV VM circuit
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
.
2SC5994 - NPN Transistor
(Sanyo Semicon Device)
Ordering number : ENN8035
2SC5994
2SC5994
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Voltage regu.
2SC5994 - NPN Single Bipolar Transistor
(ON Semiconductor)
Bipolar Transistor
50 V, 2 A, Low VCE(sat), NPN Single
2SC5994
Features
• Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • La.
2SC5998 - NPN Transistor
(Renesas)
2SC5998
Silicon NPN Epitaxial High Frequency Medium Power Amplifier
REJ03G0169-0101 Rev.1.01
Jan 27, 2006
Features
• High Transition Frequency fT =.
2SC5999 - NPN Transistors
(Sanyo Semicon Device)
Ordering number : ENN8029
2SC5999
2SC5999
Applications
•
NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Relay drive.
2SC5900 - NPN TRANSISTOR
(Sanyo Semicon Device)
2SC5900
No.
2SC5900
µ
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5900
µ µ
PW=20µs D..
2SC5900 - Silicon NPN Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5900
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·.
