2SC5909 Datasheet PDF - Panasonic Semiconductor NPN Transistor Specs

2SC5909 - NPN Transistor

Datasheet Summary

Features

s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
High breakdown voltage: VCBO ≥ 1 500 V.
High-speed switching: tf < 200 ns.
Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚.
Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d.

Datasheet Details

Part number	2SC5909
Manufacturer	Panasonic Semiconductor
File Size	212.73 KB
Description	NPN Transistor
Datasheet	2SC5909 Datasheet
Additional preview pages of the 2SC5909 datasheet.

📁 Similar Datasheet

2SC5900 - NPN TRANSISTOR (Sanyo Semicon Device)

2SC5900 - Silicon NPN Transistor (Inchange Semiconductor)

2SC5902 - NPN Transistor (INCHANGE)

2SC5906 - Silicon NPN Transistor (Toshiba)

2SC5907 - Silicon NPN Epitaxial Type Transistor (Renesas)

2SC5914 - Silicon NPN Transistor (Panasonic)

2SC5915 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR (Sanyo Semicon Device)

2SC5916 - NPN TRANSISTOR (Rohm)

2SC5929 - Silicon Transistor (ETC)

2SC5930 - Silicon NPN Triple Diffused Type Transistor (Toshiba Semiconductor)

Full PDF Text Transcription

Click to expand full text

Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 (2.0) 5.5±0.

Published: Apr 3, 2005 |