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Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage: VCBO ≥ 1 500 V
• High-speed switching: tf < 200 ns
• Wide safe operation area
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
/ Collector-base voltage (Emitter open) VCBO
1 500
18.6±0.5 (2.0)
Solder Dip
V
5.45±0.3
e Collector-emitter voltage (E-B short) VCES
1 500
V
c type) Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
5.5±0.3
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
(2.
2SC5914 Datasheet
