* High breakdown voltage: VCBO ≥ 1 500 V
* Wide safe operation area
* Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
* Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Col
2SC5912
Panasonic Semiconductor
202.79 KB
Silicon npn triple diffusion mesa type power transistor.
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Power Transistors
2SC5912
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
15.5±0.5
(10.0)
Unit: mm
φ.
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