2SC5912 Silicon NPN triple diffusion mesa type Power Transistor

Panasonic Semiconductor

Description

www.DataSheet4U.com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ.

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Datasheet Specifications

Part number: 2SC5912
Manufacturer: Panasonic Semiconductor
File Size: 202.79 KB
Datasheet: 2SC5912_PanasonicSemiconductor.pdf
Description: Silicon NPN triple diffusion mesa type Power Transistor

Features

* High breakdown voltage: VCBO ≥ 1 500 V
* Wide safe operation area
* Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
* Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Col

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2SC5912 Silicon NPN triple diffusion mesa type Power Transistor Panasonic Semiconductor

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