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2SC5912 - Silicon NPN triple diffusion mesa type Power Transistor

Datasheet Summary

Features

  • High breakdown voltage: VCBO ≥ 1 500 V.
  • Wide safe operation area.
  • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
  • Collector power dissipation Ta = 25°C Junction temperature Storage temp.

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Datasheet Details

Part number 2SC5912
Manufacturer Panasonic Semiconductor
File Size 202.79 KB
Description Silicon NPN triple diffusion mesa type Power Transistor
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www.DataSheet4U.com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 7 3 10 15 40 3 150 −55 to +150 °C °C Unit V V V A A A W 3.3±0.
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