2SC5912 Datasheet - Panasonic Semiconductor

2SC5912 Silicon NPN triple diffusion mesa type Power Transistor

2SC5912 Features

* High breakdown voltage: VCBO ≥ 1 500 V

* Wide safe operation area

* Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚

* Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Col

Datasheet Details

2SC5912

Panasonic Semiconductor

202.79 KB

Silicon npn triple diffusion mesa type power transistor.

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