2SC5932 - NPN Triple Diffused Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC5932
Manufacturer	Sanyo Semicon Device
File Size	173.59 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC5932 Datasheet
Additional preview pages of the 2SC5932 datasheet.

Package Dimensions unit : mm 2048B [2SC5932] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tem.

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Other Datasheets by Sanyo Semicon Device

Published: Jul 7, 2006 |