* Package Dimensions unit : mm 2069C [2SC5947] 0.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 :
2SC5947
Sanyo Semicon Device
62.58 KB
Npn triple diffused planar silicon transistor.
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Ordering number : ENN7787
2SC5947
NPN Triple Diffused Planar Silicon Transistor
2SC5947
Switching Regulator Applications
Featur.
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2SC5946 - NPN Transistor
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2SC5946
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Unit: mm
0.33+–00..0025
0.10+–00..0025
.
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This product plies with the RoHS Directive (EU 2002/95/EC).
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5948
2SC5948
Power Amplifier Applications
• Complementary to 2SA2120 • Remended for audio .
2SC5949 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5949
2SC5949
Power Amplifier Applications
Unit: mm
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2SC5900 - NPN TRANSISTOR
(Sanyo Semicon Device)
2SC5900
No.
2SC5900
µ
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5900
µ µ
PW=20µs D..
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(Inchange Semiconductor)
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2SC5900
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·.
