2SC5949
Toshiba ↗ Semiconductor
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Silicon npn transistor.
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5949
2SC5949
Power Amplifier Applications
Unit: mm
* Complementary to 2SA2121
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📁 Related Datasheet
2SC594 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEAT.
2SC5946 - NPN Transistor
(Panasonic Semiconductor)
Transistors
2SC5946
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
0.33+–00..0025
0.10+–00..0025
.
2SC5946G - Silicon NPN Transistor
(Panasonic)
Transistors
This product plies with the RoHS Directive (EU 2002/95/EC).
2SC5946G
Silicon NPN epitaxial planar type
For high-frequency amplifica.
2SC5947 - NPN Triple Diffused Planar Silicon Transistor
(Sanyo Semicon Device)
..
Ordering number : ENN7787
2SC5947
NPN Triple Diffused Planar Silicon Transistor
2SC5947
Switching Regulator Applications
Featur.
2SC5948 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5948
2SC5948
Power Amplifier Applications
• Complementary to 2SA2120 • Remended for audio .
2SC5949 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5949
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter.
2SC5900 - NPN TRANSISTOR
(Sanyo Semicon Device)
2SC5900
No.
2SC5900
µ
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5900
µ µ
PW=20µs D..
2SC5900 - Silicon NPN Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5900
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·.
