2SC5022, Hitachi Semiconductor
2SC5022
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
1.
2SC5022, Renesas
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SC5023, Hitachi Semiconductor
..
2SC5023
Silicon NPN Epitaxial
Application
High frequency amplifier
TO–126FM
Features
• Excellent high frequency characteristic.
2SC5024, Hitachi Semiconductor
2SC5024
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ
• High breakd.
2SC5025, Hitachi
2SC5025
Silicon NPN Epitaxial
Application
High frequency amplifier
TO–126FM
Features
• Excellent high frequency characteristics fT = 1.2 GHz typ • .
2SC5026, Kexin
SMD Type
Silicon NPN Epitaxial Planar Type 2SC5026
Transistors
Features
Low collector-emitter saturation voltage VCE(sat). High collector-emitter vo.
