* 2.5±0.1 3˚ 4.0
* +00..2205
* Low collector-emitter saturation voltage VCE(sat)
* High collector-emitter voltage (Base open) VCEO
* Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packi
2SC5026
Panasonic Semiconductor
217.71 KB
Npn transistor.
Transistors
2SC5026
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SA1890
4.5±0.1 1.6±0.2
Unit: mm
1.5±.
📁 Related Datasheet
2SC5021 - NPN TRANSISTOR
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.
2SC5022 - NPN TRANSISTOR
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2SC5022
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
1.
2SC5022 - Silicon NPN Transistor
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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2SC5023 - Silicon NPN Epitaxial Type Transistor
(Hitachi Semiconductor)
..
2SC5023
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High frequency amplifier
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• Excellent high frequency characteristic.
2SC5024 - Silicon NPN Epitaxial Type Transistor
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High frequency amplifier
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• Excellent high frequency characteristics fT = 300 MHz typ
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2SC5026 - Silicon NPN Transistor
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Low collector-emitter saturation voltage VCE(sat). High collector-emitter vo.
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(Panasonic)
Transistors
This product plies with the RoHS Directive (EU 2002/95/EC).
2SC5026G
Silicon NPN epitaxial planar type
For low-frequency output amp.
