* q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction tem
2SC5018
Panasonic Semiconductor
36.49 KB
Npn transistor.
Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05.
📁 Related Datasheet
2SC5010 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5010
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5010 is an NPN epitaxial sil.
2SC5011 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5011
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small P.
2SC5012 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5012
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small P.
2SC5013 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5013
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small P.
2SC5014 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5014
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small P.
2SC5015 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5015
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small P.
2SC5015 - NPN EPITAXIAL SILICON RF TRANSISTOR
(CEL)
DATA SHEET
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
NE68518 / 2SC5015
NPN SILICON R.
2SC5019 - NPN Transistor
(Panasonic Semiconductor)
Transistors
2SC5019
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
4.5±0.1
■ Features
1.6±0.2
1.5±0.1
• Low no.
