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2SC5029 Datasheet - Toshiba Semiconductor

2SC5029 NPN TRANSISTOR

2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1892 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Em.

2SC5029 Datasheet (134.85 KB)

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Datasheet Details

Part number:

2SC5029

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

134.85 KB

Description:

Npn transistor.

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2SC5029 NPN TRANSISTOR Toshiba Semiconductor

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