2SC5030 Datasheet - Toshiba Semiconductor

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2SC5030 NPN TRANSISTOR

2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm * <.

2SC5030_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC5030

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

232.51 KB

Description:

NPN TRANSISTOR

Applications

* Medium Power Amplifier Applications Unit: mm
* High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC =

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2SC5030 NPN TRANSISTOR Toshiba Semiconductor

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