2SC5030 Datasheet - Toshiba Semiconductor

2SC5030 NPN TRANSISTOR

2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.3 W Maximum Ratings (Ta = 25°C) Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-.

2SC5030_ToshibaSemiconductor.pdf