2SC5036
Panasonic Semiconductor
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Npn transistor.
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2SC503 - Silicon NPN Epitaxial Type Transistor
(Toshiba)
:
2SC503 2SC504
I
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
FEATURES
• High.
2SC5030 - NPN TRANSISTOR
(Toshiba Semiconductor)
2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
• • •
High DC .
2SC5032 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q.
2SC5034 - NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
9..
2SC5035 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5035
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q q
4.6±.
2SC5036A - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0..
2SC5037 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5037, 2SC5037A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0..
2SC5037A - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5037, 2SC5037A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0..
2SC5039 - NPN Transistor
(ETC)
..
.
2SC5000 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
2SC5000
Unit: mm
• Low collector saturation voltage: VCE (sat) = .
