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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES
• High Transition Frequency : fx=200MHz (Typ-) • Low Output Capacitance : C b=3.5pF (Typ. ) • Low Saturation Voltage
: V CE ( sat )=0.3V (Max.) at I c=100mA, I B =10mA • Complementary to 2SA594.
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL VcBO VcEO VEBO
Collector Current
Base Current
Collector Power Dissipation Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
ic IB PC TJ Tstg
RATING 60
UNIT V
45 V
5V
200 mA
50 mA
750 mW 5W
175 °C
-65VL75 °C
Unit in mm
jZfe,39MAX.
08.45MAX
Xr
tto to
00.45
i1
JZfo.58_,
? 2^
/
Z
jj
A^fc
H
1.
2SC594 Datasheet
