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2SC506, 2SC505 - SILICON NPN TRANSISTOR

2SC506 Description

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS.HIGH VOLTAGE SWITCHING APPLICATIONS..

2SC506 Features

* High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage

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This datasheet PDF includes multiple part numbers: 2SC506, 2SC505. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2SC506, 2SC505
Manufacturer
Toshiba ↗
File Size
116.50 KB
Datasheet
2SC505-Toshiba.pdf
Description
SILICON NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: 2SC506, 2SC505.
Please refer to the document for exact specifications by model.

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SILICON NPN TRANSISTOR Toshiba
Toshiba 2SC506-like datasheet