Datasheet4U Logo Datasheet4U.com

2SC506 - SILICON NPN TRANSISTOR

This page provides the datasheet information for the 2SC506, a member of the 2SC505 SILICON NPN TRANSISTOR family.

Datasheet Summary

Features

  • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX.

📥 Download Datasheet

Datasheet preview – 2SC506

Datasheet Details

Part number 2SC506
Manufacturer Toshiba
File Size 116.50 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC506 Datasheet
Additional preview pages of the 2SC506 datasheet.

📁 Similar Datasheet

  • 2SC5060 - Power transistor (Rohm)
  • 2SC5061 - TRANSISTORS (Rohm)
  • 2SC5063 - NPN TRANSISTOR (Panasonic Semiconductor)
  • 2SC5063 - Silicon NPN triple diffusion planar type Transistor (Kexin)
  • 2SC5064 - NPN Transistor (Toshiba Semiconductor)
  • 2SC5064 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SC5065 - NPN Transistor (Toshiba Semiconductor)
  • 2SC5065 - NPN Transistor (INCHANGE)
  • 2SC5066 - NPN Transistor (Toshiba Semiconductor)
  • 2SC5066FT - NPN TRANSISTOR (Toshiba Semiconductor)
Other Datasheets by Toshiba
  • 2SC503 - Silicon NPN Epitaxial Type Transistor
  • 2SC504 - Silicon NPN Epitaxial Type Transistor
  • 2SC505 - SILICON NPN TRANSISTOR
  • 2SC507 - SILICON NPN TRANSISTOR
  • 2SC510 - SILICON NPN TRANSISTOR
  • 2SC512 - SILICON NPN TRANSISTOR
  • 2SC5129 - Silicon NPN Transistor
  • 2SC519A - SILICON NPN TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range V CEO v EBO ic IB pC T i Tstg 300 V 200 3V 1. EMITTER 2. BASE 200 mA 3. COLLECTOR (CASE) 50 mA JEDEC 600 mW TO-39 175 °C TC-5, TB-5B -65M.75 °C TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : l.
Published: |