* q q q q 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150
2SC5063
Panasonic Semiconductor
62.47 KB
Npn transistor.
Power Transistors
2SC5063
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.
📁 Related Datasheet
2SC506 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Vol.
2SC5060 - Power transistor
(Rohm)
2SC5060
Transistors
Power transistor (90±10V, 3A)
2SC5060
Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltag.
2SC5061 - TRANSISTORS
(Rohm)
..
..
.
2SC5063 - Silicon NPN triple diffusion planar type Transistor
(Kexin)
SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SC5063
TO-252
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High-speed switching H.
2SC5064 - NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5064
2SC5064
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • .
2SC5064 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5064
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, .
2SC5065 - NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
2SC5065
VHF to UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain..
2SC5065 - NPN Transistor
(INCHANGE)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5065
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, .
