* : High Braekdown Voltage : VcEO=100V (2SC510) : VCE0= 60V (2SC512) Various Uses for Medium Power : I c (Max.) =1.5A : P c (Max.) =800mW(Ta=25°C), 8W(Tc=25°C)
* Complementary to 2SA510 and 2SA512. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC510 2SC512 V CB0
2SC512
120.51 KB
Silicon npn transistor.
SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATION.
📁 Related Datasheet
2SC510 SILICON NPN TRANSISTOR (Toshiba)
2SC5100 NPN TRANSISTOR (Sanken electric)
2SC5100 SILICON POWER TRANSISTOR (SavantIC)
2SC5100 NPN Transistor (INCHANGE)
2SC5101 NPN TRANSISTOR (Sanken electric)
2SC5101 SILICON POWER TRANSISTOR (SavantIC)
2SC5101 NPN Transistor (INCHANGE)
2SC5103 High speed switching transistor (Rohm)
2SC5103 NPN Transistor (INCHANGE)
2SC5104 NPN Transistor (Panasonic Semiconductor)
