* q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150
2SC5127A
Panasonic Semiconductor
60.02 KB
Npn transistor.
Power Transistors
2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0..
📁 Related Datasheet
2SC5127 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0..
2SC512 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS)
HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATION.
2SC5121 - NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3.16±0.1
.
2SC5122 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
2SC5122
Unit: mm
• High breakdown voltage: VCEO = 40.
2SC5124 - NPN TRANSISTOR
(Sanken electric)
2SC5124
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC.
2SC5124 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5124
DESCRIPTION ·With TO-3PML package ·High vo.
2SC5124 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5124
DESCRIPTION ·Silicon NPN diffused planar transistor ·Good Linearity of hFE ·100% ava.
2SC5125 - NPN TRANSISTOR
(Mitsubishi Electric Semiconductor)
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