2SC5122 Datasheet - Toshiba Semiconductor

2SC5122 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current DC Pulse IC 50 mA ICP 100 Base current IB 25.

2SC5122_ToshibaSemiconductor.pdf