Datasheet4U Logo Datasheet4U.com

2SC5122 Datasheet - Toshiba Semiconductor

2SC5122 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current DC Pulse IC 50 mA ICP 100 Base current IB 25.

2SC5122 Datasheet (105.93 KB)

Preview of 2SC5122 PDF

Datasheet Details

Part number:

2SC5122

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

105.93 KB

Description:

Npn transistor.

📁 Related Datasheet

2SC512 SILICON NPN TRANSISTOR (Toshiba)

2SC5121 NPN Transistor (Panasonic Semiconductor)

2SC5124 NPN TRANSISTOR (Sanken electric)

2SC5124 SILICON POWER TRANSISTOR (SavantIC)

2SC5124 NPN Transistor (INCHANGE)

2SC5125 NPN TRANSISTOR (Mitsubishi Electric Semiconductor)

2SC5127 NPN TRANSISTOR (Panasonic Semiconductor)

2SC5127A NPN TRANSISTOR (Panasonic Semiconductor)

2SC5128 Silicon NPN Transistor (Panasonic Semiconductor)

2SC5128 NPN Transistor (INCHANGE)

TAGS

2SC5122 NPN TRANSISTOR Toshiba Semiconductor

Image Gallery

2SC5122 Datasheet Preview Page 2 2SC5122 Datasheet Preview Page 3

2SC5122 Distributor