* High Breakdown Voltage : VCBO=170V, VCEO=120V High Gain and Excellent hpg Linearity : I c= 100mA (Max.) High Transition Frequency : f T=250MHz (Typ. Low Output Capacitance : C b=2.8pF(Typ. Unit iri mm /Zfe.39MAX 08A5UAX 0OA5 1 a d 1I H
* a 1 05 =08 (' h 2"~N 3] ? MAXIMUM RATING (Ta=2
2SC507
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Silicon npn transistor.
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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
VIDEO AMPLIFIER APPLICATIONS HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLIC.
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