Part number:
2SC5070
Manufacturer:
Sanyo Semicon Device
File Size:
104.34 KB
Description:
Npn transistor.
* High current capacity.
* Adoption of MBIT process.
* High DC current gain.
* Low collector-to-emitter saturation voltage.
* High VEBO. Package Dimensions unit:mm 2084A [2SC5070] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings
2SC5070
Sanyo Semicon Device
104.34 KB
Npn transistor.
📁 Related Datasheet
2SC507 - NPN Transistor
(NEC)
.
2SC507 - SILICON NPN TRANSISTOR
(Toshiba)
: ))
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
VIDEO AMPLIFIER APPLICATIONS HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLIC.
2SC5071 - NPN TRANSISTOR
(Sanken electric)
2SC5071
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VC.
2SC5071 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5071
DESCRIPTION ·With TO-3PN package ·High vol.
2SC5071 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5071
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switch.
2SC5075 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5075
2SC5075
Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Con.
2SC5076 - NPN TRANSISTOR
(Toshiba Semiconductor)
.
2SC5077 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5077, 2SC5077A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0..