* High speed (tf=100ns typ).
* High reliability (HVP process).
* High breakdown voltage (VCBO=1600V).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5042] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet
2SC5042
Sanyo Semicon Device
100.47 KB
Npn transistor.
Ordering number:EN4780
NPN Triple Diffused Planar Silicon Transistor
2SC5042
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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2SC503 2SC504
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2SC5041 - NPN TRANSISTOR
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NPN Triple Diffused Planar Silicon Transistor
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Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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Silicon NPN Power Transistors
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2SC5042
DESCRIPTION ·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·.
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Ordering number:EN4781
NPN Triple Diffused Planar Silicon Transistor
2SC5043
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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(INCHANGE)
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2SC5043
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Ordering number:EN4782A
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2SC5044
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
2SC5045 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN4783
NPN Triple Diffused Planar Silicon Transistor
2SC5045
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
