2SC5998 NPN Transistor

Renesas

Description

2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 .

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Datasheet Specifications

Part number: 2SC5998
Manufacturer: Renesas ↗
File Size: 109.61 KB
Datasheet: 2SC5998-Renesas.pdf
Description: NPN Transistor

Features

* High Transition Frequency fT = 11 GHz typ.
* High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz
* High Collector to Emitter Voltage VCEO

Applications

* e. g. FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “YC-”. 3 1 2 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Item Symbol Collector to base voltage

2SC5998 Distributors

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2SC5998 NPN Transistor Renesas

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