Datasheet Details
- Part number
- 2SC5998
- Manufacturer
- Renesas ↗
- File Size
- 109.61 KB
- Datasheet
- 2SC5998-Renesas.pdf
- Description
- NPN Transistor
2SC5998 Description
2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 .
2SC5998 Features
* High Transition Frequency fT = 11 GHz typ.
* High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz
* High Collector to Emitter Voltage VCEO
2SC5998 Applications
* e. g. FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
Note: Marking is “YC-”. 3 1
2
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
📁 Related Datasheet
📌 All Tags