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2SC5218 - Silicon NPN Epitaxial Type Transistor

2SC5218 Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

2SC5218 Features

* High gain bandwidth product fT = 9 GHz typ
* High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YK
* ”. Attention: This device is very sensitive to electro static discharge. I

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Datasheet Details

Part number
2SC5218
Manufacturer
Renesas ↗
File Size
191.88 KB
Datasheet
2SC5218_Renesas.pdf
Description
Silicon NPN Epitaxial Type Transistor

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