* High gain bandwidth product fT = 9 GHz typ
* High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YK
* ”. Attention: This device is very sensitive to electro static discharge. I
2SC5218
191.88 KB
Silicon npn epitaxial type transistor.
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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